Boron-doped Carbon Nanotube synthesized by Arc Discharge and Method of manufacturing the same

A boron-doped carbon nanotube synthesized by arc discharge and a manufacturing method thereof are disclosed. The boron, the carbon source and doping source of an anode, is evaporated through the arc discharge and then deposited on the surface of a cathode to form multi-walled carbon nanotubes, where...

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Bibliographische Detailangaben
Hauptverfasser:	LEE NAE SUNG, SYED MUHAMMAD ZAIN MEHDI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING
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Zusammenfassung:	A boron-doped carbon nanotube synthesized by arc discharge and a manufacturing method thereof are disclosed. The boron, the carbon source and doping source of an anode, is evaporated through the arc discharge and then deposited on the surface of a cathode to form multi-walled carbon nanotubes, wherein the boron is evenly distributed in the layers of the multiwall. Accordingly, the outer diameter of the multi-walled carbon nanotubes is reduced, high thermal stability is secured, and field emission characteristics are improved. 아크 방전을 이용하여 형성된 다중벽 탄소나노튜브 및 이의 제조방법이 개시된다. 양극의 탄소원과 도핑원인 보론은 아크 방전을 통해 증발된 후 음극의 표면에서 증착되어 다중벽 탄소나노튜브가 형성되고, 보론은 다중벽의 층들에 고르게 분포된다. 따라서, 다중벽 탄소나노튜브의 외경은 감소하고, 높은 열적 안정성이 확보되며, 전계 방출 특성이 개선되는 효과를 얻을 수 있다.