COMPOSITION FOR FORMING SILICA LAYER SILICA LAYER AND ELECTRONIC DEVICE

Disclosed is a composition for forming a silica film including a silicone-containing polymer and a solvent. The present invention relates to a composition for forming a silica film, a silica film prepared therefrom, and an electronic element including the same, wherein the composition has a refracti...

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Bibliographische Detailangaben
Hauptverfasser:	SAKONG JUN, LIM WANHEE, LEE HANSONG, JO HYEONSU, BAE JIN HEE, KWAK TAEKSOO, LEE CHUNGHEON, HWANG BYEONG GYU, KIM EUIHYUN, JANG SEUNGWOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Disclosed is a composition for forming a silica film including a silicone-containing polymer and a solvent. The present invention relates to a composition for forming a silica film, a silica film prepared therefrom, and an electronic element including the same, wherein the composition has a refractive index (RI) reduction rate of 3% or less obtained by calculation using the following equation 1: RI reduction rate (%) = {(RI_100 - RI_250) / RI_100} * 100. In the equation 1, RI_100 is an RI measured at the wavelength of 633 nm after the composition for forming a silica film is coated on a 8-inch bare wafer to have thickness of 7200 Å and the coated bare wafer is baked at temperature of 100 ℃ for three minutes; and RI_250 is an RI measured at the wavelength of 633 nm after the composition for forming a silica film is coated on a 8-inch bare wafer to have thickness of 7200 Å and the coated bare wafer is baked at temperature of 250℃ for three minutes. 규소 함유 중합체 및 용매를 포함하는 실리카 막 형성용 조성물로서, 하기 관계식 1에 의해 산출되는, RI(Refractive Index) 감소율이 3% 이하인 실리카 막 형성용 조성물, 이로부터 제조된 실리카 막, 그리고 상기 실리카 막을 포함하는 전자소자에 관한 것이다. RI(Refractive Index) 감소율(%) = {(RI100 - RI250) / RI100} * 100 (상기 관계식 1에서, RI100: 상기 실리카 막 형성용 조성물을 7200Å의 두께로 8인치 배어 웨이퍼(bare wafer) 상에 코팅하고, 100℃의 온도에서 3분 베이크를 진행한 후, 633 nm의 파장에서 측정한 굴절율, RI250: 상기 실리카 막 형성용 조성물을 7200Å의 두께로 8인치 배어 웨이퍼(bare wafer) 상에 코팅하고, 250℃의 온도에서 3분 베이크를 진행한 후, 633 nm의 파장에서 측정한 굴절율)