FILM FORMING METHOD AND FILM FORMING APPARATUS

Provided is a technique capable of forming a molybdenum film on an underlayer while suppressing damage to the underlayer. According to an aspect of the present invention, a film forming method comprises the following steps of: preparing a substrate on which an insulating film is formed; and forming...

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Bibliographische Detailangaben
Hauptverfasser:	YOKOI TSUBASA, YAMAGUCHI KATSUMASA
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a technique capable of forming a molybdenum film on an underlayer while suppressing damage to the underlayer. According to an aspect of the present invention, a film forming method comprises the following steps of: preparing a substrate on which an insulating film is formed; and forming a seed layer on the insulating film. The present invention has a process of forming a molybdenum film on the seed layer by supplying a molybdenum-containing gas and a reducing gas to the substrate on which the seed layer is formed. 하지층에 대한 대미지를 억제하면서, 하지층 상에 몰리브덴막을 형성할 수 있는 기술을 제공한다. 본 개시의 일 양태에 의한 성막 방법은, 절연막이 형성된 기판을 준비하는 공정과, 상기 절연막 상에 시드층을 형성하는 공정과, 상기 시드층이 형성된 상기 기판에 몰리브덴 함유 가스 및 환원 가스를 공급하여 상기 시드층 상에 몰리브덴막을 형성하는 공정을 갖는다.