METHOD FOR DEPOSITING THIN FILM

The present invention relates to a thin film deposition method and, more particularly, to a thin film deposition method for forming a gate insulating film on a silicon carbide substrate. A thin film deposition method according to an embodiment of the present invention includes the steps of: preparin...

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Bibliographische Detailangaben
Hauptverfasser:	KIM YOON JEONG, LEE JUNG KYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a thin film deposition method and, more particularly, to a thin film deposition method for forming a gate insulating film on a silicon carbide substrate. A thin film deposition method according to an embodiment of the present invention includes the steps of: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulating film on the silicon carbide substrate by an atomic layer deposition process at a temperature of 100 to 400℃. 본 발명은 박막 증착 방법에 관한 것으로, 보다 상세하게는 탄화규소 기판 상에 게이트 절연막을 형성하기 위한 박막 증착 방법에 관한 것이다. 본 발명의 실시 예에 따른 박막 증착 방법은 복수의 반도체 영역을 가지는 탄화규소 기판을 마련하는 단계; 및 상기 탄화규소 기판 상에, 100 내지 400℃의 온도에서 원자층 증착 공정으로 게이트 절연막을 형성하는 단계;를 포함한다.