SURFACE MICRO-MACHINED INFRARED SENSOR USING HIGHLY TEMPERATURE STABLE INTERFEROMETRIC ABSORBER

Disclosed is a method for manufacturing a surface machine processed infrared sensor package. Provided is a semiconductor wafer having a front surface and a back surface. A transistor is regulated on a front side of a substrate. A thin film reflecting material is implanted on the front side of the su...

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Bibliographische Detailangaben
Hauptverfasser:	CHUAN KAI LIANG, MARINESCU RADU M, KROPELNICKI PIOTR, KARAGOEZOGLU HERMANN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Disclosed is a method for manufacturing a surface machine processed infrared sensor package. Provided is a semiconductor wafer having a front surface and a back surface. A transistor is regulated on a front side of a substrate. A thin film reflecting material is implanted on the front side of the substrate, and a sensor is formed on a front side of a semiconductor substrate adjacent to a reflecting material. A thin film absorbing material is deposited on the sensor, and the thin film absorbing material is substantially parallel to the reflecting material. 표면 기계 가공된 적외선 센서 패키지를 제조하는 방법이 개시되어 있다. 전면과 후면을 갖는 반도체 웨이퍼가 제공된다. 트랜지스터가 기판의 전방 측 상에 규정된다. 박막 반사재가 기판의 전방 측에 주입되고, 센서가 반사재에 인접한 반도체 기판의 전방 측 상에 형성된다. 박막 흡수재가 센서 상에 퇴적되며, 박막 흡수재는 반사재와 실질적으로 평행하다.