HETEROGENEOUS DIELECTRIC BONDING SCHEME

A method includes a step of allowing a first package component to be in contact with a second package component. The first package component includes a first dielectric layer comprising a first dielectric material. The first dielectric material is a silicon oxide-based dielectric material. The secon...

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Bibliographische Detailangaben
Hauptverfasser:	YU CHEN HUA, CHIOU WEN CHIH, YANG KU FENG, CHUNG MING TSU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A method includes a step of allowing a first package component to be in contact with a second package component. The first package component includes a first dielectric layer comprising a first dielectric material. The first dielectric material is a silicon oxide-based dielectric material. The second package component includes a second dielectric layer comprising a second dielectric material different from the first dielectric material. The second dielectric material includes silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof. An annealing process is performed to bond the first dielectric layer to the second dielectric layer. 방법은 제 1 패키지 컴포넌트를 제 2 패키지 컴포넌트와 접촉하도록 놓는 단계를 포함한다. 제 1 패키지 컴포넌트는 제 1 유전체 재료를 포함하는 제 1 유전체 층을 포함하고, 제 1 유전체 재료는 실리콘 산화물계 유전체 재료이다. 제 2 패키지 컴포넌트는 제 1 유전체 재료와는 상이한 제 2 유전체 재료를 포함하는 제 2 유전체 층을 포함한다. 제 2 유전체 재료는 실리콘과, 탄소, 질소, 및 이들의 조합으로 이루어진 그룹으로부터 선택된 원소를 포함한다. 제 1 유전체 층을 제 2 유전체 층에 접합하기 위해 어닐링 프로세스가 수행된다.