SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME

One embodiment of the present invention provides a semiconductor light emitting device, which comprises: a first electrode layer having first and second regions; a light emitting structure disposed to overlap the first region on the first electrode layer, including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a plurality of holes connected to the first conductivity type semiconductor layer through the active layer, wherein the first conductivity type semiconductor layer forms a first surface of the light emitting structure, and the second conductivity type semiconductor layer forms a second surface opposite to the first surface; a concavo-convex pattern disposed on one region of the first surface; a dam structure surrounding one region of the first surface and disposed at the corner of the first surface; a transparent electrode layer disposed between the first electrode layer and the light emitting structure, overlapping the first region, and being in contact with the second conductive type semiconductor layer; an interlayer insulating layer disposed between the transparent electrode layer and the first electrode layer and having a plurality of first openings respectively connected to the plurality of holes and a plurality of second openings connected to the transparent electrode layer; a second electrode layer disposed between the first electrode layer and the interlayer insulating layer, connected to the transparent electrode layer through the plurality of second openings, disposed to be separated from the first electrode layer, and extending onto the second region of the first electrode layer; an electrode pad disposed on the second electrode layer to overlap the second region; and a plurality of contact electrodes passing through the second electrode layer, the interlayer insulating layer, and the transparent electrode layer and connected to the first conductivity type semiconductor layer through the plurality of holes. Accordingly, it is possible to provide the semiconductor light emitting device with a reduced defect rate in a manufacturing process. 본 발명의 일 실시예는, 제1 및 제2 영역을 갖는 제1 전극층; 상기 제1 전극층 상에 상기 제1 영역과 중첩하도록 배치되며, 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 포함하고, 상기 활성층을 통하여 상기 제1 도전형 반도체층에 연결된 복수의 홀을 갖는 발광 구조물 - 상기 제1 도전형 반도체층은 상기 발광 구조물의 제1 면을 이루며, 상기 제2 도전형 반도체층은 상기 제1 면에 반대되는 제2 면을 이룸-; 상기 제1 면의 일 영역에 배치된 요철 패턴; 상기 제1 면의 일 영역을 둘러싸며 상기 제1 면의 모서리에 배치된 댐 구조물; 상기 제1 전극층과 상기 발