METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL
The present invention relates to a method for manufacturing a metal oxide electrode. The method for manufacturing a photocathode having a CuM_2O_4 metal oxide thin film comprises the following steps of: applying a solution, in which Cu precursor material and M precursor material are dissolved, on a...
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| description | The present invention relates to a method for manufacturing a metal oxide electrode. The method for manufacturing a photocathode having a CuM_2O_4 metal oxide thin film comprises the following steps of: applying a solution, in which Cu precursor material and M precursor material are dissolved, on a substrate by spin coating to form a precursor thin film; performing a first heat treatment process on the precursor thin film at a first temperature; and performing a second heat treatment process on the first heat-treated precursor thin film at a second temperature higher than the first temperature, wherein the M may include one selected from a group consisting of bismuth (Bi), chromium (Cr), and iron (Fe). The metal oxide electrode manufactured by the method is uniform and dense and has bulky grain.
본 발명은 금속산화물 전극의 제조방법에 관한 것으로, CuM2O4 금속산화물 박막을 구비하는 광환원 전극의 제조방법에 있어서, 기판 상에 스핀 코팅으로 Cu 전구체 물질과 M 전구체 물질이 용해된 용액을 도포하여 전구체 박막을 형성하는 단계; 상기 전구체 박막에 대해 제1 온도에서 제1 열처리 공정을 진행하는 단계; 및 상기 제1 열처리된 전구체 박막에 대해 상기 제1 온도보다 높은 제2 온도에서 제2 열처리 공정을 진행하는 단계;를 포함하고, 상기 M은 비스무스(Bi), 크롬(Cr) 및 철(Fe)로 이루어진 그룹에서 선택된 하나를 포함할 수 있다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20220117635A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20220117635A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20220117635A3</originalsourceid><addsrcrecordid>eNrjZIj0dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cAijv6KPhHeLq4Krj6uDqHBPkDWQEe_iH-zo4gLa4Kjn4uEAFdqAJnD1dfT2egNmdXHx8eBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhLvHWRkYGRkYGhobmZs6mhMnCoA5NAyUw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL</title><source>esp@cenet</source><creator>CHO INSUN</creator><creatorcontrib>CHO INSUN</creatorcontrib><description>The present invention relates to a method for manufacturing a metal oxide electrode. The method for manufacturing a photocathode having a CuM_2O_4 metal oxide thin film comprises the following steps of: applying a solution, in which Cu precursor material and M precursor material are dissolved, on a substrate by spin coating to form a precursor thin film; performing a first heat treatment process on the precursor thin film at a first temperature; and performing a second heat treatment process on the first heat-treated precursor thin film at a second temperature higher than the first temperature, wherein the M may include one selected from a group consisting of bismuth (Bi), chromium (Cr), and iron (Fe). The metal oxide electrode manufactured by the method is uniform and dense and has bulky grain.
본 발명은 금속산화물 전극의 제조방법에 관한 것으로, CuM2O4 금속산화물 박막을 구비하는 광환원 전극의 제조방법에 있어서, 기판 상에 스핀 코팅으로 Cu 전구체 물질과 M 전구체 물질이 용해된 용액을 도포하여 전구체 박막을 형성하는 단계; 상기 전구체 박막에 대해 제1 온도에서 제1 열처리 공정을 진행하는 단계; 및 상기 제1 열처리된 전구체 박막에 대해 상기 제1 온도보다 높은 제2 온도에서 제2 열처리 공정을 진행하는 단계;를 포함하고, 상기 M은 비스무스(Bi), 크롬(Cr) 및 철(Fe)로 이루어진 그룹에서 선택된 하나를 포함할 수 있다.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220824&DB=EPODOC&CC=KR&NR=20220117635A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220824&DB=EPODOC&CC=KR&NR=20220117635A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO INSUN</creatorcontrib><title>METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL</title><description>The present invention relates to a method for manufacturing a metal oxide electrode. The method for manufacturing a photocathode having a CuM_2O_4 metal oxide thin film comprises the following steps of: applying a solution, in which Cu precursor material and M precursor material are dissolved, on a substrate by spin coating to form a precursor thin film; performing a first heat treatment process on the precursor thin film at a first temperature; and performing a second heat treatment process on the first heat-treated precursor thin film at a second temperature higher than the first temperature, wherein the M may include one selected from a group consisting of bismuth (Bi), chromium (Cr), and iron (Fe). The metal oxide electrode manufactured by the method is uniform and dense and has bulky grain.
본 발명은 금속산화물 전극의 제조방법에 관한 것으로, CuM2O4 금속산화물 박막을 구비하는 광환원 전극의 제조방법에 있어서, 기판 상에 스핀 코팅으로 Cu 전구체 물질과 M 전구체 물질이 용해된 용액을 도포하여 전구체 박막을 형성하는 단계; 상기 전구체 박막에 대해 제1 온도에서 제1 열처리 공정을 진행하는 단계; 및 상기 제1 열처리된 전구체 박막에 대해 상기 제1 온도보다 높은 제2 온도에서 제2 열처리 공정을 진행하는 단계;를 포함하고, 상기 M은 비스무스(Bi), 크롬(Cr) 및 철(Fe)로 이루어진 그룹에서 선택된 하나를 포함할 수 있다.</description><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj0dQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cAijv6KPhHeLq4Krj6uDqHBPkDWQEe_iH-zo4gLa4Kjn4uEAFdqAJnD1dfT2egNmdXHx8eBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhLvHWRkYGRkYGhobmZs6mhMnCoA5NAyUw</recordid><startdate>20220824</startdate><enddate>20220824</enddate><creator>CHO INSUN</creator><scope>EVB</scope></search><sort><creationdate>20220824</creationdate><title>METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL</title><author>CHO INSUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220117635A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHO INSUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHO INSUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL</title><date>2022-08-24</date><risdate>2022</risdate><abstract>The present invention relates to a method for manufacturing a metal oxide electrode. The method for manufacturing a photocathode having a CuM_2O_4 metal oxide thin film comprises the following steps of: applying a solution, in which Cu precursor material and M precursor material are dissolved, on a substrate by spin coating to form a precursor thin film; performing a first heat treatment process on the precursor thin film at a first temperature; and performing a second heat treatment process on the first heat-treated precursor thin film at a second temperature higher than the first temperature, wherein the M may include one selected from a group consisting of bismuth (Bi), chromium (Cr), and iron (Fe). The metal oxide electrode manufactured by the method is uniform and dense and has bulky grain.
본 발명은 금속산화물 전극의 제조방법에 관한 것으로, CuM2O4 금속산화물 박막을 구비하는 광환원 전극의 제조방법에 있어서, 기판 상에 스핀 코팅으로 Cu 전구체 물질과 M 전구체 물질이 용해된 용액을 도포하여 전구체 박막을 형성하는 단계; 상기 전구체 박막에 대해 제1 온도에서 제1 열처리 공정을 진행하는 단계; 및 상기 제1 열처리된 전구체 박막에 대해 상기 제1 온도보다 높은 제2 온도에서 제2 열처리 공정을 진행하는 단계;를 포함하고, 상기 M은 비스무스(Bi), 크롬(Cr) 및 철(Fe)로 이루어진 그룹에서 선택된 하나를 포함할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF MANUFACTURING METAL OXIDE ELECTRODE PHOTOCATHODE AND PHOTO-ELECTROCHEMICAL CELL |
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