DEFECT DETECTION METHOD METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME AND DEFECT DECTECTION SYSTEM PERFORMING THE SAME

DEFECT DETECTION METHOD METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME AND DEFECT DECTECTION SYSTEM PERFORMING THE SAME

In a defect detection method, a substrate is placed on a stage. A 2D image is obtained by scanning the surface of the substrate using light. A defect location is detected in the 2D image. An intensity profile is performed on each pixel corresponding to the defect location to generate 3D image inform...

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Bibliographische Detailangaben
Hauptverfasser: AKIYAMA SATOSHI, YOU JAE YOUNG, CHOI MIN HO, KIM JIN WOO, LEE GYE YOUNG, ANDO TOSHITSUGU
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a defect detection method, a substrate is placed on a stage. A 2D image is obtained by scanning the surface of the substrate using light. A defect location is detected in the 2D image. An intensity profile is performed on each pixel corresponding to the defect location to generate 3D image information. A 3D map is displayed from the 3D image information. 결함 검출 방법에 있어서, 기판을 스테이지 상에 배치시킨다. 광을 이용하여 상기 기판 표면을 스캐닝하여 2차원 이미지를 획득한다. 상기 2차원 이미지에서 결함 위치를 검출한다. 상기 결함 위치에 해당하는 각각의 픽셀들 상에 강도 프로파일(intensity profile)을 수행하여 3차원 이미지 정보를 생성한다. 상기 3차원 이미지 정보로부터 3차원 맵을 표시한다.