Silicon single-crystal ingot grower and method thereof

A silicon single crystal ingot growth device includes: a chamber; a crucible installed inside the chamber and accommodating a silicon melt; a heater installed around the crucible; a water cooling tub installed in the crucible and including a plurality of water cooling regions partitioned in the grow...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI YOUNG KYU, SON YONG SUK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A silicon single crystal ingot growth device includes: a chamber; a crucible installed inside the chamber and accommodating a silicon melt; a heater installed around the crucible; a water cooling tub installed in the crucible and including a plurality of water cooling regions partitioned in the growth direction of the silicon single crystal ingot; and a control unit for adjusting at least one of the speed, the flow rate, and the temperature of cooling water supplied to each of the plurality of water cooling regions of the water cooling tube. 실리콘 단결정 잉곳 성장 장치는 챔버와, 챔버 내부에 설치되어 실리콘 융액을 수용하는 도가니와, 도가니의 주위에 설치된 히터와, 도가니 상에 설치되어 실리콘 단결정 잉곳의 성장 방향을 따라 구획된 복수의 수냉 영역을 포함하는 수냉관과, 수냉관의 복수의 수냉 영역 각각으로 공급되는 냉각수의 속도, 냉각수의 유량 및 냉각수의 온도 중 적어도 하나 이상을 조절하는 제어부를 포함한다.