Phase Shift Blankmask and Photomask for EUV lithography

A blank mask for EUV comprises: a reflective film formed on a substrate; and a phase shift film formed on the reflective film. The phase shift film is formed of a material comprising ruthenium (Ru) and tantalum (Ta). The phase shift film has a relative reflectance of 3 to 30 %, a phase shift amount...

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Bibliographische Detailangaben
Hauptverfasser:	LEE JONG HWA, YANG CHUL KYU, SHIN CHEOL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A blank mask for EUV comprises: a reflective film formed on a substrate; and a phase shift film formed on the reflective film. The phase shift film is formed of a material comprising ruthenium (Ru) and tantalum (Ta). The phase shift film has a relative reflectance of 3 to 30 %, a phase shift amount of 170 to 220°, and a surface roughness of 0.5 nmRMS or less. Excellent resolution can be obtained by using a photomask manufactured using the blank mask when a pattern of 7 nm or less is finally manufactured. EUV 용 블랭크마스크는 기판 상에 형성된 반사막 및 반사막 상에 형성된 위상반전막을 구비한다. 위상반전막은 루테늄(Ru) 및 탄탈륨(Ta)을 포함하는 물질로 형성된다. 위상반전막은 3~30% 의 상대반사율을 가지고, 170~220°의 위상반전량을 가지며, 0.5nmRMS 이하의 표면 거칠기를 갖는다. 이러한 블랭크마스크를 이용하여 제작된 포토마스크를 이용하여, 최종적으로 7nm 이하의 패턴 제작 시 우수한 해상도(Resolution)을 얻을 수 있다.