Vertical NAND flash memory device and method of manufacturing the same

Disclosed are a vertical NAND flash memory device and a manufacturing method thereof, which can uniformly form the surface of a charge trap layer, thereby improving the uniformity of a device. The vertical NAND flash memory device comprises a charge trap layer provided on an inner wall of a channel...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE DONG KYU, YON GUK HYON, LEE SU HYEONG, LEE, MIN HYUN, KIM, TAE IN, OH, YOUNG TEK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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