APPARATUS AND METHOD FOR ESTIMATING BREAKDOWN VOLTAGE OF SILICON DIOXIDE FILM BASED ON NEURAL NETWORK MODEL

The present invention relates to a method for predicting an oxide film breakdown voltage, which may comprise the steps of: generating breakdown voltage information on a first test die among a plurality of test dies; generating a breakdown voltage prediction model by updating a weight parameter of a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM HAK GYUN, CHUNG BUM SUK
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!