화학 기계 연마용 조성물 및 화학 기계 연마 방법
텅스텐이나 코발트 등의 도전체 금속을 포함하는 반도체 기판을 고속 또한 평탄하게 연마할 수 있음과 함께, 연마 후의 표면 결함을 저감할 수 있는 화학 기계 연마 조성물 및 화학 기계 연마 방법을 제공한다. 본 발명에 관한 화학 기계 연마용 조성물은, (A) 하기 일반식 (1)로 표시되는 관능기를 갖는 실리카 입자와, (B) 실란 화합물을 함유한다. -COO-M+ ... (1) (M+는 1가의 양이온을 나타낸다.) Provided are a chemical-mechanical polishing composition and a chem...
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| creator | YAMADA YUUYA WANG PENGYU SUGIE NORIHIKO KAMEI YASUTAKA |
| description | 텅스텐이나 코발트 등의 도전체 금속을 포함하는 반도체 기판을 고속 또한 평탄하게 연마할 수 있음과 함께, 연마 후의 표면 결함을 저감할 수 있는 화학 기계 연마 조성물 및 화학 기계 연마 방법을 제공한다. 본 발명에 관한 화학 기계 연마용 조성물은, (A) 하기 일반식 (1)로 표시되는 관능기를 갖는 실리카 입자와, (B) 실란 화합물을 함유한다. -COO-M+ ... (1) (M+는 1가의 양이온을 나타낸다.)
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. -COO-M+ . . . (1) (M+ represents a monovalent cation.) |
| format | Patent |
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Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. -COO-M+ . . . (1) (M+ represents a monovalent cation.)</description><language>kor</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220712&DB=EPODOC&CC=KR&NR=20220098780A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220712&DB=EPODOC&CC=KR&NR=20220098780A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMADA YUUYA</creatorcontrib><creatorcontrib>WANG PENGYU</creatorcontrib><creatorcontrib>SUGIE NORIHIKO</creatorcontrib><creatorcontrib>KAMEI YASUTAKA</creatorcontrib><title>화학 기계 연마용 조성물 및 화학 기계 연마 방법</title><description>텅스텐이나 코발트 등의 도전체 금속을 포함하는 반도체 기판을 고속 또한 평탄하게 연마할 수 있음과 함께, 연마 후의 표면 결함을 저감할 수 있는 화학 기계 연마 조성물 및 화학 기계 연마 방법을 제공한다. 본 발명에 관한 화학 기계 연마용 조성물은, (A) 하기 일반식 (1)로 표시되는 관능기를 갖는 실리카 입자와, (B) 실란 화합물을 함유한다. -COO-M+ ... (1) (M+는 1가의 양이온을 나타낸다.)
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. -COO-M+ . . . (1) (M+ represents a monovalent cation.)</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB8O3PK26kzFV7t2PBqc4vCm-kbXi_veDNrpcKbhRvetGx8vWaPwusN_QrYVAElVr7eNJWHgTUtMac4lRdKczMou7mGOHvophbkx6cWFyQmp-allsR7BxkZGBkZGFhamFsYOBoTpwoAkl9Eeg</recordid><startdate>20220712</startdate><enddate>20220712</enddate><creator>YAMADA YUUYA</creator><creator>WANG PENGYU</creator><creator>SUGIE NORIHIKO</creator><creator>KAMEI YASUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20220712</creationdate><title>화학 기계 연마용 조성물 및 화학 기계 연마 방법</title><author>YAMADA YUUYA ; WANG PENGYU ; SUGIE NORIHIKO ; KAMEI YASUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220098780A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2022</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMADA YUUYA</creatorcontrib><creatorcontrib>WANG PENGYU</creatorcontrib><creatorcontrib>SUGIE NORIHIKO</creatorcontrib><creatorcontrib>KAMEI YASUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMADA YUUYA</au><au>WANG PENGYU</au><au>SUGIE NORIHIKO</au><au>KAMEI YASUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>화학 기계 연마용 조성물 및 화학 기계 연마 방법</title><date>2022-07-12</date><risdate>2022</risdate><abstract>텅스텐이나 코발트 등의 도전체 금속을 포함하는 반도체 기판을 고속 또한 평탄하게 연마할 수 있음과 함께, 연마 후의 표면 결함을 저감할 수 있는 화학 기계 연마 조성물 및 화학 기계 연마 방법을 제공한다. 본 발명에 관한 화학 기계 연마용 조성물은, (A) 하기 일반식 (1)로 표시되는 관능기를 갖는 실리카 입자와, (B) 실란 화합물을 함유한다. -COO-M+ ... (1) (M+는 1가의 양이온을 나타낸다.)
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. -COO-M+ . . . (1) (M+ represents a monovalent cation.)</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | 화학 기계 연마용 조성물 및 화학 기계 연마 방법 |
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