RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a polymer comprising a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof; a composition for a resist underlayer film containing a solvent; and a pattern forming method using the compositio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KWON SOONHYUNG, BAEK JAEYEOL, KIM MINSOO, JIN HWAYOUNG, KIM SEONG JIN, CHOI YOOJEONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to a polymer comprising a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof; a composition for a resist underlayer film containing a solvent; and a pattern forming method using the composition for a resist underlayer film. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification. Accordingly, the etching process time can be shortened. 하기 화학식 1로 표시되는 구조단위, 화학식 2로 표시되는 구조단위, 또는 이들의 조합을 포함하는 중합체; 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성방법에 관한 것이다: [화학식 1] JPEGpat00041.jpg3661 [화학식 2] JPEGpat00042.jpg29112 상기 화학식 1, 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.