SUBSTRATE PROCESSING APPARATUS AND METHOD OF CLEANING THE SAME

The present invention relates to a method of cleaning a substrate processing apparatus and, more particularly, to a method of determining a cleaning end time when cleaning a substrate processing apparatus. One embodiment of a cleaning method of a substrate processing apparatus according to the prese...

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Bibliographische Detailangaben
Hauptverfasser:	KO SEOK NAM, YOON SIL EE, KIM TAE WOONG, PARK SANG MOON, KIM DON SU, LEE SANG WON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a method of cleaning a substrate processing apparatus and, more particularly, to a method of determining a cleaning end time when cleaning a substrate processing apparatus. One embodiment of a cleaning method of a substrate processing apparatus according to the present invention includes: a temperature setting step for setting a substrate processing space of the substrate processing apparatus to a cleaning temperature; a cleaning step for supplying a cleaning gas to the substrate processing space to clean the substrate processing apparatus; and a cleaning end time determination step for determining, as a cleaning end time, a time point at which the temperature of the substrate processing space is maintained for a predetermined time after reaching a predetermined temperature range based on the cleaning temperature. The method of cleaning a substrate processing apparatus according to the present invention can determine a cleaning end time more accurately. 본 발명은 기판 처리 장치를 세정하는 방법에 관한 것으로, 보다 상세하게는 기판 처리 장치를 세정할 때 세정 종료 시점을 결정하는 방법에 관한 것이다. 본 발명에 따른 기판 처리 장치의 세정 방법의 일 실시예는 기판 처리 장치의 기판 처리 공간을 세정 온도로 셋팅하는 온도 셋팅 단계; 상기 기판 처리 공간에 세정 가스를 공급하여 상기 기판 처리 장치를 세정하는 세정 단계; 및 상기 기판 처리 공간의 온도가 상기 세정 온도를 중심으로 소정 온도 범위 내에 도달한 이후 소정 시간 동안 유지되는 시점을 세정 종료 시점으로 결정하는 세정 종료 시점 결정 단계;를 포함한다.