PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

A photoresist composition comprises: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group; a second polymer comprising the first repeating unit compri...

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Bibliographische Detailangaben
Hauptverfasser:	KE YANG, SUZANNE M. COLEY, BRANDON WENNING, BHOOSHAN POPERE, CHOONGBONG LEE, JAMES F. CAMERON, EMAD AQAD, MANIBARSHA GOSWAMI, JAMES W. THACKERAY
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	A photoresist composition comprises: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group; a second polymer comprising the first repeating unit comprising the hydroxy-aryl group, a second repeating unit comprising an acid-labile group, and a third repeating unit comprising a lactone group; photoacid generators; and solvents. 포토레지스트 조성물은 히드록시-아릴 기를 포함하는 제1 반복 단위 및 산-불안정성 기를 포함하는 제2 반복 단위를 포함하는 제1 중합체(여기서, 제1 중합체는 락톤 기를 포함하지 않음); 히드록시-아릴 기를 포함하는 제1 반복 단위, 산-불안정성 기를 포함하는 제2 반복 단위, 및 락톤 기를 포함하는 제3 반복 단위를 포함하는 제2 중합체; 광산 발생제; 및 용매를 포함한다.