3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

An object of the present invention is to provide a 3D semiconductor memory device having reduced area, increased cell capacity per unit area, and an improved electrical characteristic. The present invention comprises a first structure and a second structure joined to the first structure. Each of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HWANG YOONJO, KIM JIYOUNG, CHOI JUNYOUNG, SUNG JUNGTAE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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