Ultraviolet Photodetector and Preparation Method Thereof

The present invention relates to an ultraviolet photodetector comprising a p-n junction detection device composed of an n-type inorganic semiconductor and a p-type organic polymer semiconductor, and a method for manufacturing the same. Because the ultraviolet light photodetector of the present inven...

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Bibliographische Detailangaben
Hauptverfasser:	TRAN MANH HOANG, PARK TAE HYUN, CHOI HYUNG WOOK, HUR JAE HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMISTRY COMPOUNDS THEREOF ELECTRICITY INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to an ultraviolet photodetector comprising a p-n junction detection device composed of an n-type inorganic semiconductor and a p-type organic polymer semiconductor, and a method for manufacturing the same. Because the ultraviolet light photodetector of the present invention has a band gap in an ultraviolet-visible ray region, it is suitable for efficiently detecting ultraviolet rays. It has a large optical absorption bandwidth, high photoselectivity, high responsiveness, low noise, high photoselectivity, and repeatability. In addition, the method for manufacturing an ultraviolet photodetector of the present invention is easy to manufacture in a large area through a simple, fast and low-cost solution process. 본 발명은 n-형 무기반도체와 p-형 유기고분자 반도체 반도체로 구성된 p-n 접합 검출 소자를 포함하는 자외선 광검출 소자 및 이의 제조방법에 관한 것이다. 본 발명의 자외선 광검출 소자는 자외선-가시광선 영역대의 밴드갭을 가지므로, 자외선을 효율적으로 검출하기에 적합하며, 광학 흡수 밴드폭이 크고, 광선택성도 높고, 높은 응답성, 낮은 노이즈, 높은 광선택성, 및 반복성을 가지고 있다. 또한, 본 발명의 자외선 광검출 소자 제조방법은 간단하고 빠른 저비용의 용액공정을 통해 대면적 제작이 용이하다.