Reflective type Blankmask for EUV and Method for manufacturing the same
The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention com...
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| creator | KONG GIL WOO LEE JONG HWA SEO GYEONG WON |
| description | The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention comprises: a substrate; a reflective film; and a phase shifting film, wherein the phase shifting film is formed of a material comprising ruthenium (Ru) and molybdenum (Mo).
EUV 용 반사형 블랭크마스크는, 기판, 반사막, 위상반전막을 구비한다. 위상반전막은 Ru 및 Mo 를 포함하는 재질로 형성된다. Shadowing Effect 가 최소화되고 이에 따라 미세한 회로 패턴을 정밀하게 형성할 수 있는 포토마스크의 제작이 가능하다. |
| format | Patent |
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EUV 용 반사형 블랭크마스크는, 기판, 반사막, 위상반전막을 구비한다. 위상반전막은 Ru 및 Mo 를 포함하는 재질로 형성된다. Shadowing Effect 가 최소화되고 이에 따라 미세한 회로 패턴을 정밀하게 형성할 수 있는 포토마스크의 제작이 가능하다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220310&DB=EPODOC&CC=KR&NR=20220030048A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220310&DB=EPODOC&CC=KR&NR=20220030048A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KONG GIL WOO</creatorcontrib><creatorcontrib>LEE JONG HWA</creatorcontrib><creatorcontrib>SEO GYEONG WON</creatorcontrib><title>Reflective type Blankmask for EUV and Method for manufacturing the same</title><description>The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention comprises: a substrate; a reflective film; and a phase shifting film, wherein the phase shifting film is formed of a material comprising ruthenium (Ru) and molybdenum (Mo).
EUV 용 반사형 블랭크마스크는, 기판, 반사막, 위상반전막을 구비한다. 위상반전막은 Ru 및 Mo 를 포함하는 재질로 형성된다. Shadowing Effect 가 최소화되고 이에 따라 미세한 회로 패턴을 정밀하게 형성할 수 있는 포토마스크의 제작이 가능하다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAPSk3LSU0uySxLVSipLEhVcMpJzMvOTSzOVkjLL1JwDQ1TSMxLUfBNLcnITwEL5SbmlaYlJpeUFmXmpSuUZKQqFCfmpvIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDIyMDA2MDAxMLR2PiVAEA20o0AA</recordid><startdate>20220310</startdate><enddate>20220310</enddate><creator>KONG GIL WOO</creator><creator>LEE JONG HWA</creator><creator>SEO GYEONG WON</creator><scope>EVB</scope></search><sort><creationdate>20220310</creationdate><title>Reflective type Blankmask for EUV and Method for manufacturing the same</title><author>KONG GIL WOO ; LEE JONG HWA ; SEO GYEONG WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220030048A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>KONG GIL WOO</creatorcontrib><creatorcontrib>LEE JONG HWA</creatorcontrib><creatorcontrib>SEO GYEONG WON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KONG GIL WOO</au><au>LEE JONG HWA</au><au>SEO GYEONG WON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reflective type Blankmask for EUV and Method for manufacturing the same</title><date>2022-03-10</date><risdate>2022</risdate><abstract>The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention comprises: a substrate; a reflective film; and a phase shifting film, wherein the phase shifting film is formed of a material comprising ruthenium (Ru) and molybdenum (Mo).
EUV 용 반사형 블랭크마스크는, 기판, 반사막, 위상반전막을 구비한다. 위상반전막은 Ru 및 Mo 를 포함하는 재질로 형성된다. Shadowing Effect 가 최소화되고 이에 따라 미세한 회로 패턴을 정밀하게 형성할 수 있는 포토마스크의 제작이 가능하다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Reflective type Blankmask for EUV and Method for manufacturing the same |
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