Reflective type Blankmask for EUV and Method for manufacturing the same

The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention com...

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Bibliographische Detailangaben
Hauptverfasser:	KONG GIL WOO, LEE JONG HWA, SEO GYEONG WON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a reflective mask blank for extreme ultraviolet (EUV) rays capable of manufacturing a photomask that is configured to minimize shadowing effects and on which fine circuit patterns can be formed. The reflective mask blank for EUV according to the present invention comprises: a substrate; a reflective film; and a phase shifting film, wherein the phase shifting film is formed of a material comprising ruthenium (Ru) and molybdenum (Mo). EUV 용 반사형 블랭크마스크는, 기판, 반사막, 위상반전막을 구비한다. 위상반전막은 Ru 및 Mo 를 포함하는 재질로 형성된다. Shadowing Effect 가 최소화되고 이에 따라 미세한 회로 패턴을 정밀하게 형성할 수 있는 포토마스크의 제작이 가능하다.