Apparatus and Method for Processing Substrate

The present invention relates to a substrate treatment apparatus. The substrate treatment apparatus includes: a chamber providing a treatment space; a support part supporting at least one substrate; a gas injection part injecting gas toward the support part; a gas supply part supplying gas to the ga...

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Bibliographische Detailangaben
Hauptverfasser:	JANG YOUNJOO, ROH JAESUNG, CHO JIHYUN, SON CHEONG, YOON HONGMIN, YOON HONGSOO, JIN SEWHAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a substrate treatment apparatus. The substrate treatment apparatus includes: a chamber providing a treatment space; a support part supporting at least one substrate; a gas injection part injecting gas toward the support part; a gas supply part supplying gas to the gas injection part; and an exhaust part exhausting gas from the treatment space. The gas injection part includes: a first injection unit injecting gas into a first treatment region of the treatment space; and a second injection unit injecting gas into a second treatment region of the treatment space. The exhaust part includes: a first exhaust member connected to the first treatment region; a second exhaust member connected to the second treatment region; and an integrated member connected to each of the first exhaust member and the second exhaust member. The gas supply part includes: a first supply unit supplying first gas and first purge gas to the first injection unit; a second supply unit supplying second gas and second purge gas to the second injection unit; and a switching unit switching a flow path of the second gas supplied by the second supply unit. The switching unit switches the flow path of the second gas supplied from the second supply unit to supply the second gas to one selected from among the first exhaust member, the second exhaust member, and the second injection unit. Therefore, the present invention is capable of improving the safety of a procedure of exhausting gas from a treatment space. 본 발명은 처리공간을 제공하는 챔버; 적어도 하나의 기판을 지지하는 지지부; 상기 지지부를 향해 가스를 분사하는 가스분사부; 상기 가스분사부에 가스를 공급하는 가스공급부; 및 상기 처리공간으로부터 가스를 배기시키는 배기부를 포함하되, 상기 가스분사부는 상기 처리공간 중에서 제1처리영역에 가스를 분사하는 제1분사유닛, 및 상기 처리공간 중에서 제2처리영역에 가스를 분사하는 제2분사유닛을 포함하고, 상기 배기부는 상기 제1처리영역에 연결된 제1배기부재, 상기 제2처리영역에 연결된 제2배기부재, 및 상기 제1배기부재와 상기 제2배기부재 각각에 연결된 통합부재를 포함하며, 상기 가스공급부는 상기 제1분사유닛에 제1가스와 제1퍼지가스를 공급하는 제1공급유닛, 상기 제2분사유닛에 제2가스와 제2퍼지가스를 공급하는 제2공급유닛, 및 상기 제2공급유닛이 공급하는 제2가스의 유동경로를 전환하는 전환유닛을 포함하고, 상기 전환유닛은 상기 제2공급유닛으로부터 공급된 제2가스의 유동경로를 전환하여 상기 제2가스를 상기 제1배기부재, 상기 제2배기부재, 및 상기 제2분사유닛 중에서 선택된 어느 하나로 공급하는 기판처리장치에 관한 것이다.