Method for uniform flow behavior in an electroplating cell
Provided are apparatuses and methods for depositing a metal layer on a wafer. A secondary weir is located in an area below a primary weir such that plating solution which overflows the primary weir flows substantially uniformly in azimuth during electroplating. The plating solution overflows the pri...
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| creator | DINNEEN DANIEL MARK FENG JINGBIN |
| description | Provided are apparatuses and methods for depositing a metal layer on a wafer. A secondary weir is located in an area below a primary weir such that plating solution which overflows the primary weir flows substantially uniformly in azimuth during electroplating. The plating solution overflows the primary weir and flows over the secondary weir while staying in contact with the already overflowing plating solution, and therefore the overflow is substantially uniform in azimuth and flow rate between wafer processes is increased to electroplate the wafers.
웨이퍼 상에 금속 층을 디포지션하기 위한 장치들 및 방법들이 제공된다. 보조 위어가 주 위어 아래의 영역에 위치하여서 전기도금 동안에 주 위어를 오버플로우한 도금 용액이 실질적으로 방위각적으로 균일하게 유동한다. 도금 용액이 주 위어를 오버플로우하고, 이미 오버플로우한 도금 용액과 접촉하면서 머무르며 보조 위어 상으로 유동하며 이로써 오버플로우가 실질적으로 방위각적으로 균일하게 되면서 웨이퍼 프로세스들 간에서 플로우 레이트를 증가시킴으로써 웨이퍼들을 전기도금하는 방법들이 제공된다. |
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웨이퍼 상에 금속 층을 디포지션하기 위한 장치들 및 방법들이 제공된다. 보조 위어가 주 위어 아래의 영역에 위치하여서 전기도금 동안에 주 위어를 오버플로우한 도금 용액이 실질적으로 방위각적으로 균일하게 유동한다. 도금 용액이 주 위어를 오버플로우하고, 이미 오버플로우한 도금 용액과 접촉하면서 머무르며 보조 위어 상으로 유동하며 이로써 오버플로우가 실질적으로 방위각적으로 균일하게 되면서 웨이퍼 프로세스들 간에서 플로우 레이트를 증가시킴으로써 웨이퍼들을 전기도금하는 방법들이 제공된다.</description><language>eng ; kor</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220214&DB=EPODOC&CC=KR&NR=20220017982A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220214&DB=EPODOC&CC=KR&NR=20220017982A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DINNEEN DANIEL MARK</creatorcontrib><creatorcontrib>FENG JINGBIN</creatorcontrib><title>Method for uniform flow behavior in an electroplating cell</title><description>Provided are apparatuses and methods for depositing a metal layer on a wafer. A secondary weir is located in an area below a primary weir such that plating solution which overflows the primary weir flows substantially uniformly in azimuth during electroplating. The plating solution overflows the primary weir and flows over the secondary weir while staying in contact with the already overflowing plating solution, and therefore the overflow is substantially uniform in azimuth and flow rate between wafer processes is increased to electroplate the wafers.
웨이퍼 상에 금속 층을 디포지션하기 위한 장치들 및 방법들이 제공된다. 보조 위어가 주 위어 아래의 영역에 위치하여서 전기도금 동안에 주 위어를 오버플로우한 도금 용액이 실질적으로 방위각적으로 균일하게 유동한다. 도금 용액이 주 위어를 오버플로우하고, 이미 오버플로우한 도금 용액과 접촉하면서 머무르며 보조 위어 상으로 유동하며 이로써 오버플로우가 실질적으로 방위각적으로 균일하게 되면서 웨이퍼 프로세스들 간에서 플로우 레이트를 증가시킴으로써 웨이퍼들을 전기도금하는 방법들이 제공된다.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyTS3JyE9RSMsvUijNywRSuQppOfnlCkmpGYllmUDRzDyFxDyF1JzU5JKi_IKcxJLMvHSF5NScHB4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEu8dZGRgZGRgYGhuaWHkaEycKgAkAy_S</recordid><startdate>20220214</startdate><enddate>20220214</enddate><creator>DINNEEN DANIEL MARK</creator><creator>FENG JINGBIN</creator><scope>EVB</scope></search><sort><creationdate>20220214</creationdate><title>Method for uniform flow behavior in an electroplating cell</title><author>DINNEEN DANIEL MARK ; FENG JINGBIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20220017982A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2022</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DINNEEN DANIEL MARK</creatorcontrib><creatorcontrib>FENG JINGBIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DINNEEN DANIEL MARK</au><au>FENG JINGBIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for uniform flow behavior in an electroplating cell</title><date>2022-02-14</date><risdate>2022</risdate><abstract>Provided are apparatuses and methods for depositing a metal layer on a wafer. A secondary weir is located in an area below a primary weir such that plating solution which overflows the primary weir flows substantially uniformly in azimuth during electroplating. The plating solution overflows the primary weir and flows over the secondary weir while staying in contact with the already overflowing plating solution, and therefore the overflow is substantially uniform in azimuth and flow rate between wafer processes is increased to electroplate the wafers.
웨이퍼 상에 금속 층을 디포지션하기 위한 장치들 및 방법들이 제공된다. 보조 위어가 주 위어 아래의 영역에 위치하여서 전기도금 동안에 주 위어를 오버플로우한 도금 용액이 실질적으로 방위각적으로 균일하게 유동한다. 도금 용액이 주 위어를 오버플로우하고, 이미 오버플로우한 도금 용액과 접촉하면서 머무르며 보조 위어 상으로 유동하며 이로써 오버플로우가 실질적으로 방위각적으로 균일하게 되면서 웨이퍼 프로세스들 간에서 플로우 레이트를 증가시킴으로써 웨이퍼들을 전기도금하는 방법들이 제공된다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Method for uniform flow behavior in an electroplating cell |
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