k INTEGRATED FLOWABLE LOW-K GAP-FILL AND PLASMA TREATMENT

k INTEGRATED FLOWABLE LOW-K GAP-FILL AND PLASMA TREATMENT

Provided are methods of depositing a film in high aspect ratio (AR) structures having small dimensions. The method provides: flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (less than 600℃), optimal film curing, and etch bac...

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Bibliographische Detailangaben
Hauptverfasser: KIM MYUNGSUN, STOLFI MICHAEL, SEAMONS MARTIN J, LIANG JINGMEI, COLOMBEAU BENJAMIN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided are methods of depositing a film in high aspect ratio (AR) structures having small dimensions. The method provides: flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (less than 600℃), optimal film curing, and etch back for forming a low k dielectric film with a dielectric constant, k-value less than 3. 작은 치수들을 갖는 고 종횡비(AR) 구조들로 막을 증착하는 방법들이 제공된다. 이 방법은 심 없는 갭 충전을 위한 유동성 증착, 저온 유도 결합 플라즈마(ICP) 처리(600℃ 미만)에 의한 막 고밀화, 선택적 막 경화, 및 3 미만의 유전 상수(k 값)를 갖는 저 k 유전체 막을 형성하기 위한 에치백을 제공한다.