CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

Provided are: a CMP slurry composition for polishing tungsten pattern wafer comprising at least one solvent selected from a polar solvent and a non-polar solvent, abrasive, and a biocide, wherein the abrasive comprises silica modified with at least one of a silane having a nitrogen number of 2 and a...

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Bibliographische Detailangaben
Hauptverfasser:	LEE JONG WON, KIM WON JUNG, PARK TAE WON, KIM HYEONG MOOK, CHO YOUN JIN, LEE EUI RANG, KOO YOON YOUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	Provided are: a CMP slurry composition for polishing tungsten pattern wafer comprising at least one solvent selected from a polar solvent and a non-polar solvent, abrasive, and a biocide, wherein the abrasive comprises silica modified with at least one of a silane having a nitrogen number of 2 and a silane having a nitrogen number of 3, wherein the biocide comprises a compound of chemical formula 3; and a method for polishing tungsten pattern wafer using the same. 극성 용매, 비극성 용매 중 1종 이상의 용매; 연마제; 및 살생물제를 포함하고, 상기 연마제는 질소 개수가 2개인 실란, 질소 개수가 3개인 실란 중 1종 이상으로 개질된 실리카를 포함하고, 상기 살생물제는 화학식 3의 화합물을 포함하는 것인, 텅스텐 패턴 웨이퍼 연마용 CMP 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법이 제공된다.