Etchant Composition

The present invention relates to an etchant composition capable of etching an indium oxide layer and a method using the same. According to the present invention, when wet etching a single or multi-layer of an indium oxide film, stable etching is possible and the etch rate is easy to control. Also, m...

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Bibliographische Detailangaben
Hauptverfasser:	LEE MYUNG HAN, KIM SE HOON, LEE YOUG JUN, CHI SANG WON, LEE HEE WOONG, AHN HO WON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to an etchant composition capable of etching an indium oxide layer and a method using the same. According to the present invention, when wet etching a single or multi-layer of an indium oxide film, stable etching is possible and the etch rate is easy to control. Also, metal wirings with a complex structure can be formed, and the problem of short circuit that occurs during the formation of the metal wirings by metal particles can be solved. Furthermore, due to the etching characteristics, the present invention can simplify the manufacturing process of semiconductor devices including a TFT-LCD display device, thereby contributing to productivity improvement. 본 발명은 인듐 산화막을 식각할 수 있는 식각액 조성물 및 이를 이용한 방법에 관한 것으로, 본 발명에 따르면 인듐 산화막의 단일막 또는 다중막층을 습식식각 할 때, 안정적인 식각이 가능하며 식각속도의 제어가 쉽고 복잡한 구조의 금속배선을 형성할 수 있으며 금속배선 형성 과정에서 발생하는 금속입자에 의한 단락의 문제를 해결할 수 있다. 또한, 이와 같은 식각특성으로 TFT-LCD 디스플레이 장치 등의 반도체 소자의 제조공정을 단순화 시킬 수 있어 생산성 향상에 기여할 수 있다.