METHOD OF DEPOSITION

According to the present invention, provided is a method for depositing a silicon hydride carbon nitride (SiCN:H) film on a substrate by plasma enhanced chemical vapor deposition (PECVD). According to the present invention, the method comprises the steps of: providing a substrate into a chamber; int...

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Bibliographische Detailangaben
Hauptverfasser:	CROOK KATHRINE, HARPER TRISTAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	According to the present invention, provided is a method for depositing a silicon hydride carbon nitride (SiCN:H) film on a substrate by plasma enhanced chemical vapor deposition (PECVD). According to the present invention, the method comprises the steps of: providing a substrate into a chamber; introducing silane (SiH_4), a carbon donor precursor, and nitrogen gas (N_2) into the chamber; and maintaining a plasma in the chamber to deposit SiCN:H on the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250 °C. 본 발명에 따르면, 플라즈마 강화 화학 기상 증착(PECVD)에 의해 기판 상에 수소화 실리콘 탄소 질화물(SiCN:H) 막을 퇴적하는 방법이 제공되며, 이는 기판을 챔버 내에 제공하는 단계; 챔버 내로 실란(SiH4), 탄소 공여 전구체, 및 질소 가스(N2)를 도입하는 단계; 및 PECVD에 의해 기판 상에 SiCN:H를 퇴적하기 위해 챔버 내에서 플라즈마를 유지하는 단계를 포함하며, 여기서 기판은 약 250 ℃ 미만의 온도에서 유지된다.