HETEROJUNCTION DIODE MADE OF GALLIUM OXIDE/4H-SiC AND MANUFACTURING METHOD THEREOF

According to embodiments of the present invention, it is possible to reduce the amount of leakage current by depositing gallium oxide on a silicon carbide substrate to form a heterojunction type diode, thereby improving efficiency of the gallium oxide diode. The present invention relates to a method for manufacturing a gallium oxide/silicon carbide heterojunction diode for sensing ultraviolet light using a radio frequency (RF) sputtering method, and a heterojunction diode thereof. According to an embodiment of the present invention, the method for manufacturing the heterojunction diode comprises the steps of: preparing a silicon carbide (SiC) substrate; forming a gallium oxide (Ga_2_O_3) layer on a silicon carbide substrate; treating the gallium oxide layer with heat; forming an anode on the gallium oxide layer; and forming a cathode under the silicon carbide substrate. 본 발명은 RF(Radio Frequency) 스퍼터링(Sputtering) 방식을 이용하여 단자외선(Ultra violet light) 감지를 위한 산화갈륨/탄화규소 이종접합 다이오드를 제작하는 방법 및 그 이종접합 다이오드에 관한 것이다. 본 발명의 실시예에 따른 이종접합 다이오드 제작 방법은, 탄화규소(SiC) 기판을 준비하고, 탄화규소 기판 상에 산화갈륨(Ga2O3) 층을 형성하며, 산화갈륨 층의 열처리를 수행하고, 산화갈륨 층 상에 양극을 형성하고, 탄화규소 기판 아래에 음극을 형성한다.