THIN FILM FORMING METHOD

A method of processing a substrate for filling a gap without a seam or void comprises the steps of: providing a substrate having a gap into a reaction chamber, pumping the reaction chamber to a pressure of 5 Torr or less; and filling the gap with a film by alternately sequentially supplying a precur...

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Bibliographische Detailangaben
Hauptverfasser: KIM HIECHUL, KANG SUNGKYU, YOO TAEHEE, KIM YOUNGHOON, LEE KYUNGEUN, CHOI JONGWAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
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Zusammenfassung:A method of processing a substrate for filling a gap without a seam or void comprises the steps of: providing a substrate having a gap into a reaction chamber, pumping the reaction chamber to a pressure of 5 Torr or less; and filling the gap with a film by alternately sequentially supplying a precursor, a reactant, and radio frequency electromagnetic radiation including a relatively high radio frequency component and a relatively low radio frequency component. 이음매 또는 공극 없이 갭을 충전하기 위한 기판 처리 방법으로서, 갭을 갖는 기판을 반응 챔버 내에 제공하는 단계, 5 토르 이하의 압력으로 반응 챔버를 펌핑하는 단계, 그리고 전구체, 반응물, 및 비교적 높은 무선 주파수 성분과 비교적 낮은 무선 주파수 성분을 포함한 무선 주파수 전자기 복사선을 교대 순차적으로 공급함으로써 상기 갭을 막으로 충전하는 단계를 포함한다.