SEMICONDUCTOR PROCESSING CHAMBER WITH FILAMENT LAMPS HAVING NONUNIFORM HEAT OUTPUT

Provided is a linear heat lamp arrangement which can locally control nonuniformity of temperature on a substrate during processing of a semiconductor. A reactor includes a substrate holder interposed between an upper array and a lower array of a linear heat lamp. At least one lamp in a bank includes...

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Bibliographische Detailangaben
Hauptverfasser:	KIM SAM, MURALIDHAR SHIVA K.T. RAJAVELU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a linear heat lamp arrangement which can locally control nonuniformity of temperature on a substrate during processing of a semiconductor. A reactor includes a substrate holder interposed between an upper array and a lower array of a linear heat lamp. At least one lamp in a bank includes a filament having various density and power output along the length of the lamp. In particular, the at least one lamp in the bank includes a filament which has higher filament winding density in the central portion of the lamp than in the peripheral portion of the lamp. In some embodiments, at least one lamp is a central lamp extended across the central portion of the substrate which is heated by the lamp. Furthermore, at least one lamp in the bank has higher power output in the central portion of the lamp than in the peripheral portion of the lamp. 반도체 처리 동안 기판의 온도 불균일성을 국부적으로 제어할 수 있는 선형 열 램프 배열이 제공된다. 반응기는 선형 열 램프의 상부 어레이와 하부 어레이 사이에 위치한 기판 홀더를 포함한다. 뱅크 중 적어도 하나의 램프는 램프의 길이를 따라 다양한 밀도 및 전력 출력을 갖는 필라멘트를 포함합니다. 특히, 뱅크의 적어도 하나의 램프는 램프의 주변 부분에 비해 램프의 중앙 부분 내에 더 높은 필라멘트 권선 밀도를 갖는 필라멘트를 포함한다. 일부 실시 예에서, 적어도 하나의 램프는 램프에 의해 가열된 기판의 중앙 부분을 가로 질러 연장되는 중앙 램프이다. 더욱이, 뱅크의 적어도 하나의 램프는 램프의 주변 부분에서보다 램프의 중앙 부분 내에서 더 높은 전력 출력을 갖는다.