Variable resistance memory device

According to the present invention, a semiconductor device and a variable resistance memory device are provided. According to embodiments, the variable resistance memory device comprises memory cells horizontally arranged on a substrate, wherein each of the memory cells includes a selection element...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEE JINWOO, YU SEUNG GEUN, AN GWANGGUK, PARK KWANGMIN, LEE JA BIN, WU ZHE, AHN DONGHO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!