SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a highly reliable semiconductor device and a method for manufacturing the semiconductor device. In a semiconductor device having a bottom gate structure transistor in which an insulating layer functioning as a channel protective film is formed on an oxide semiconductor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAMAZAKI SHUNPEI, TOCHIBAYASHI KATSUAKI, HIGANO SATOSHI
Format: Patent
Sprache:eng ; kor
Schlagworte:
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