SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a highly reliable semiconductor device and a method for manufacturing the semiconductor device. In a semiconductor device having a bottom gate structure transistor in which an insulating layer functioning as a channel protective film is formed on an oxide semiconductor...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAZAKI SHUNPEI, TOCHIBAYASHI KATSUAKI, HIGANO SATOSHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a highly reliable semiconductor device and a method for manufacturing the semiconductor device. In a semiconductor device having a bottom gate structure transistor in which an insulating layer functioning as a channel protective film is formed on an oxide semiconductor film, an insulating layer in contact with the oxide semiconductor film and/or a source electrode layer and a drain electrode layer are formed to perform an impurity removal treatment, thereby preventing elements in etching gas from remaining as impurities on the surface of the oxide semiconductor film. The impurity concentration on the surface of the oxide semiconductor film is 5 × 10^18 atoms/cm^3 or less, preferably 1 × 10^18 atoms/cm^3. 본 발명은 신뢰성이 높은 반도체 장치 및 상기 반도체 장치의 제작 방법을 제공한다. 산화물 반도체막 위에 채널 보호막으로서 기능하는 절연층이 형성된 보텀 게이트 구조의 트랜지스터를 갖는 반도체 장치에서 산화물 반도체막 위에 접촉된 절연층 및/또는 소스 전극층 및 드레인 전극층의 형성 후에 불순물 제거 처리를 함으로써 에칭 가스에 함유된 원소가 산화물 반도체막 표면에 불순물로서 잔존하는 것을 방지한다. 산화물 반도체막 표면에서의 불순물 농도는 5×1018atoms/cm3, 바람직하게는 1×1018atoms/cm3 이하로 한다.