Copper alloy bonding wires and method of manufacturing the same
The present invention relates to a copper alloy bonding wire. As an embodiment, the present invention provides a bonding wire for a semiconductor package, a copper alloy bonding wire comprises: a core material containing 0.5% to 1% by weight of at least one or more elements of gold, platinum, nickel...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a copper alloy bonding wire. As an embodiment, the present invention provides a bonding wire for a semiconductor package, a copper alloy bonding wire comprises: a core material containing 0.5% to 1% by weight of at least one or more elements of gold, platinum, nickel, and palladium and the balance of copper and other unavoidable impurities; a first coating layer formed on the core material and made of palladium; and a second covering layer formed on the first covering layer and made of gold. It is possible to provide a copper alloy bonding wire with improved reliability and lifespan.
본 발명은 구리 합금 본딩 와이어와 관련된다. 본 발명은 실시예로서, 반도체 패키지용 본딩 와이어로서, 금, 백금, 니켈, 팔라듐 중 적어도 1종 이상의 원소 0.5 중량% 내지 1중량% 및 잔부가 구리와 기타 불가피 불순물을 포함하는 심재, 상기 심재 위에 형성되고 팔라듐으로 이루어진 제1피복층 및 상기 제1피복층 위에 형성되고 금으로 이루어진 제2피복층을 포함하는 구리 합금 본딩 와이어를 제시한다. |
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