ETCHING SOLUTION FOR SILICON NITRIDE LAYER AND METHOD FOR PREPARING SEMICONDUCTOR DEVICE USING THE SAME

The present invention relates to a silicon nitride film etching solution and a method for manufacturing a semiconductor device using the same, and more specifically, to a silicon nitride film etching solution that prevents generation of particles because a silicon compound is not easily decomposed a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MYUNG HYUN KIM, JUN EUN LEE, HO SEONG YOO, YOUN SUG YOO, PYONG HWA JANG, JUN HO YANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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