ETCHING SOLUTION FOR SILICON NITRIDE LAYER AND METHOD FOR PREPARING SEMICONDUCTOR DEVICE USING THE SAME

The present invention relates to a silicon nitride film etching solution and a method for manufacturing a semiconductor device using the same, and more specifically, to a silicon nitride film etching solution that prevents generation of particles because a silicon compound is not easily decomposed a...

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Bibliographische Detailangaben
Hauptverfasser:	MYUNG HYUN KIM, JUN EUN LEE, HO SEONG YOO, YOUN SUG YOO, PYONG HWA JANG, JUN HO YANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a silicon nitride film etching solution and a method for manufacturing a semiconductor device using the same, and more specifically, to a silicon nitride film etching solution that prevents generation of particles because a silicon compound is not easily decomposed and increases the selectivity for a silicon nitride film compared to a silicon oxide film, and a method of manufacturing a semiconductor device performed using the same. 본 발명은 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법에 관한 것이며, 보다 상세하게는 실리콘 화합물이 쉽게 분해되지 않아 파티클 발생을 방지하며, 실리콘 산화막 대비 실리콘 질화막에 대한 선택비를 증가시키는 실리콘 질화막 식각 용액 및 이를 사용하여 수행되는 반도체 소자의 제조 방법을 제공하기 위한 것이다.