EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR

프로세싱 시스템은, 진공 챔버; 진공 챔버 주위에 부착된 복수의 프로세싱 시스템들; 및 진공으로부터 빠져나가지(exit) 않으면서, 복수의 프로세싱 시스템들 사이에서 웨이퍼를 이동시키기 위한, 진공 챔버의 웨이퍼 취급(handling) 시스템을 포함한다. 극자외선 블랭크를 제조하기 위한 물리 기상 증착 시스템은, 몰리브덴, 몰리브덴 합금, 또는 이들의 조합을 포함하는 타겟을 포함한다. A processing system includes: a vacuum chamber; a plurality of processing sub-syste...

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Hauptverfasser: HOFMANN RALF, FOAD MAJEED A, BEASLEY CARA
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creator HOFMANN RALF
FOAD MAJEED A
BEASLEY CARA
description 프로세싱 시스템은, 진공 챔버; 진공 챔버 주위에 부착된 복수의 프로세싱 시스템들; 및 진공으로부터 빠져나가지(exit) 않으면서, 복수의 프로세싱 시스템들 사이에서 웨이퍼를 이동시키기 위한, 진공 챔버의 웨이퍼 취급(handling) 시스템을 포함한다. 극자외선 블랭크를 제조하기 위한 물리 기상 증착 시스템은, 몰리브덴, 몰리브덴 합금, 또는 이들의 조합을 포함하는 타겟을 포함한다. A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
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A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. 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A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0KwkAQQOE0FqLeYcBaWGMQ2zWZzS7ZnzCZiKlikLUSDcT7YwoPYPVe8S2TG16Z0CG0lkleTLDIYA3rUJKsdQdONhWcrfTVvL5VMueWjC-h6RpGB9IX4HD2BQQFoUaSbIIH1kioAq2TxWN4TnHz6yrZKuRc7-L47uM0Dvf4ip--olSkeyGy01Fk8vCf-gKdXDS_</recordid><startdate>20210503</startdate><enddate>20210503</enddate><creator>HOFMANN RALF</creator><creator>FOAD MAJEED A</creator><creator>BEASLEY CARA</creator><scope>EVB</scope></search><sort><creationdate>20210503</creationdate><title>EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR</title><author>HOFMANN RALF ; FOAD MAJEED A ; BEASLEY CARA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210048604A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HOFMANN RALF</creatorcontrib><creatorcontrib>FOAD MAJEED A</creatorcontrib><creatorcontrib>BEASLEY CARA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOFMANN RALF</au><au>FOAD MAJEED A</au><au>BEASLEY CARA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR</title><date>2021-05-03</date><risdate>2021</risdate><abstract>프로세싱 시스템은, 진공 챔버; 진공 챔버 주위에 부착된 복수의 프로세싱 시스템들; 및 진공으로부터 빠져나가지(exit) 않으면서, 복수의 프로세싱 시스템들 사이에서 웨이퍼를 이동시키기 위한, 진공 챔버의 웨이퍼 취급(handling) 시스템을 포함한다. 극자외선 블랭크를 제조하기 위한 물리 기상 증착 시스템은, 몰리브덴, 몰리브덴 합금, 또는 이들의 조합을 포함하는 타겟을 포함한다. A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
CINEMATOGRAPHY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MATERIALS THEREFOR
METALLURGY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANK MANUFACTURING SYSTEM AND METHOD OF OPERATION THEREFOR
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