Half-tone attenuated phase shift blankmask and photomask for EUV lithography

The halftone phase shift blank mask for extreme ultraviolet lithography includes a multilayer reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorption film sequentially provided on a transparent LTEM substrate. The phase shift film has h...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JEONG SEE JUN, LEE JONG HWA, YANG CHUL KYU, SHIN CHEOL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!