Half-tone attenuated phase shift blankmask and photomask for EUV lithography

The halftone phase shift blank mask for extreme ultraviolet lithography includes a multilayer reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorption film sequentially provided on a transparent LTEM substrate. The phase shift film has h...

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Bibliographische Detailangaben
Hauptverfasser:	JEONG SEE JUN, LEE JONG HWA, YANG CHUL KYU, SHIN CHEOL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The halftone phase shift blank mask for extreme ultraviolet lithography includes a multilayer reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorption film sequentially provided on a transparent LTEM substrate. The phase shift film has high reflectivity of 20% or more. Accordingly, NILS and MEEF characteristics are finally improved during wafer printing. 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크는, LTEM 투명 기판 상에 순차적으로 구비된 다층 반사막, 캡핑막, 제1식각저지막, 위상반전막, 제2식각저지막, 및 흡수막을 구비한다. 위상반전막은 20% 이상의 고반사율을 구비하며, 이에 따라 최종적으로 Wafer Printing시 NILS 및 MEEF 특성이 향상된다.