ELECTRONIC DEVICE AND OPERATING METHOD OF ELECTRONIC DEVICE

ELECTRONIC DEVICE AND OPERATING METHOD OF ELECTRONIC DEVICE

Provided is a semiconductor memory which can improve operating characteristics and reliability of electronic devices. The semiconductor memory comprises: a first variable resistance film including antimony (Sb); a second variable resistance film containing antimony (Sb) in an amount different from t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: KIM MYOUNG SUB
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Provided is a semiconductor memory which can improve operating characteristics and reliability of electronic devices. The semiconductor memory comprises: a first variable resistance film including antimony (Sb); a second variable resistance film containing antimony (Sb) in an amount different from that of the first variable resistance film, and having a crystallization rate different from that of the first variable resistance film; and a first electrode interposed between the first variable resistance film and the second variable resistance film. 반도체 메모리는, 안티몬(Sb)을 포함한 제1 가변 저항막; 상기 제1 가변 저항막과 상이한 함량으로 안티몬(Sb)을 포함하고, 상기 제1 가변 저항막과 결정화 속도가 상이한 제2 가변 저항막; 및 상기 제1 가변 저항막과 상기 제2 가변 저항막의 사이에 개재된 제1 전극을 포함할 수 있다.