RESIDUE REMOVAL IN METAL GATE CUTTING PROCESS

Provided is a method for removing metal gate residues. The method comprises the steps of: forming a gate dielectric layer; forming a metal gate strip over a bottom unit of the gate dielectric layer; and performing a first etching process on the metal gate strip to remove a part of the metal gate str...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUNG CHIH CHANG, LIN YIH ANN, CHEN BING HUNG, FENG CHIEH NING
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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