METHOD AND APPARATUS FOR PURGING AND PLASMA SUPPRESSION IN A PROCESS CHAMBER

A substrate processing system comprises a shower head which has a head unit and a stem unit and transmits precursor gas into a processing chamber. A baffle comprises a base unit having a larger outer diameter than an outer diameter of the head unit of the shower head. The baffle comprises a dielectr...

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Bibliographische Detailangaben
Hauptverfasser:	BREILING PATRICK, SUBRAMONIUM PRAMOD, O'LOUGHLIN JENNIFER, SHANKAR NAGRAJ, GERBER KEVIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A substrate processing system comprises a shower head which has a head unit and a stem unit and transmits precursor gas into a processing chamber. A baffle comprises a base unit having a larger outer diameter than an outer diameter of the head unit of the shower head. The baffle comprises a dielectric material and is disposed between the head unit of the shower head and an upper surface of the processing chamber. 기판 프로세싱 시스템은 헤드부 및 스템부를 포함하며 프리커서 가스(precursor gas)를 프로세싱 챔버 내로 전달하는 샤워헤드를 포함한다. 베플(baffle)은 상기 샤워헤드의 헤드부의 외경보다 큰 외경을 갖는 베이스부를 갖는다. 상기 베플은 유전체 재료를 포함하며 상기 샤워헤드의 헤드부와 상기 프로세싱 챔버의 상부 표면 간에 배치된다.