Lithography method using multi-scale simulation and semiconductor manufacturing method and exposure equipment based on the lithography method

The technical idea of the present invention provides a lithography method, a semiconductor device manufacturing method based on the lithography method, and exposure equipment so as to choose the optimum resist. The lithography method includes: predicting a shape of the virtual resist pattern based o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHOI JOON MYUNG, KIM BYUNG GOOK, LEE HYUNG WOO, MOON JUNG HWAN, JEONG CHANG YOUNG, KIM MU YOUNG, CHO MAENG HYO, PARK SUNG WOO, LEE BYUNG HOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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