STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME
The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition...
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| creator | KIM BOKHEON PIUMI DANIELE RAAIJMAKERS IVO JOHANNES SUN YITING DE ROEST DAVID |
| description | The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition and plasma-enhanced chemical vapor deposition. The surface properties of the photoresist underlayer can be manipulated using a treatment process.
포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 플라즈마-강화 주기적(예, 원자층) 증착 및 플라즈마-강화 화학 기상 증착 중 하나 이상을 사용하여 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면 특성은 처리 공정을 사용하여 조작될 수 있다. |
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포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 플라즈마-강화 주기적(예, 원자층) 증착 및 플라즈마-강화 화학 기상 증착 중 하나 이상을 사용하여 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면 특성은 처리 공정을 사용하여 조작될 수 있다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210120&DB=EPODOC&CC=KR&NR=20210007862A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210120&DB=EPODOC&CC=KR&NR=20210007862A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM BOKHEON</creatorcontrib><creatorcontrib>PIUMI DANIELE</creatorcontrib><creatorcontrib>RAAIJMAKERS IVO JOHANNES</creatorcontrib><creatorcontrib>SUN YITING</creatorcontrib><creatorcontrib>DE ROEST DAVID</creatorcontrib><title>STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME</title><description>The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition and plasma-enhanced chemical vapor deposition. The surface properties of the photoresist underlayer can be manipulated using a treatment process.
포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 플라즈마-강화 주기적(예, 원자층) 증착 및 플라즈마-강화 화학 기상 증착 중 하나 이상을 사용하여 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면 특성은 처리 공정을 사용하여 조작될 수 있다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAPDgkKdQ4JDXJV8PRz9gl18fRzV3BUCPDwD_EPcg32DA5RCPVzcQ3ycYx0DVJw9HNR8HUN8fB3UfB3U3DzD_IFKQ929HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkaGBgYG5hZmRo7GxKkCAKzvLZE</recordid><startdate>20210120</startdate><enddate>20210120</enddate><creator>KIM BOKHEON</creator><creator>PIUMI DANIELE</creator><creator>RAAIJMAKERS IVO JOHANNES</creator><creator>SUN YITING</creator><creator>DE ROEST DAVID</creator><scope>EVB</scope></search><sort><creationdate>20210120</creationdate><title>STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME</title><author>KIM BOKHEON ; PIUMI DANIELE ; RAAIJMAKERS IVO JOHANNES ; SUN YITING ; DE ROEST DAVID</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20210007862A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2021</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM BOKHEON</creatorcontrib><creatorcontrib>PIUMI DANIELE</creatorcontrib><creatorcontrib>RAAIJMAKERS IVO JOHANNES</creatorcontrib><creatorcontrib>SUN YITING</creatorcontrib><creatorcontrib>DE ROEST DAVID</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM BOKHEON</au><au>PIUMI DANIELE</au><au>RAAIJMAKERS IVO JOHANNES</au><au>SUN YITING</au><au>DE ROEST DAVID</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME</title><date>2021-01-20</date><risdate>2021</risdate><abstract>The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition and plasma-enhanced chemical vapor deposition. The surface properties of the photoresist underlayer can be manipulated using a treatment process.
포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 플라즈마-강화 주기적(예, 원자층) 증착 및 플라즈마-강화 화학 기상 증착 중 하나 이상을 사용하여 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면 특성은 처리 공정을 사용하여 조작될 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME |
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