STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME

The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition...

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Bibliographische Detailangaben
Hauptverfasser:	KIM BOKHEON, PIUMI DANIELE, RAAIJMAKERS IVO JOHANNES, SUN YITING, DE ROEST DAVID
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a structure comprising a photoresist underlayer, and to a method of forming a structure comprising the photoresist underlayer. The method comprises a step of forming a photoresist underlayer using one or more of plasma-enhanced periodic (eg, atomic layer) deposition and plasma-enhanced chemical vapor deposition. The surface properties of the photoresist underlayer can be manipulated using a treatment process. 포토레지스트 하부층을 포함한 구조체, 및 포토레지스트 하부층을 포함한 구조체를 형성하는 방법이 개시된다. 예시적인 방법은, 플라즈마-강화 주기적(예, 원자층) 증착 및 플라즈마-강화 화학 기상 증착 중 하나 이상을 사용하여 포토레지스트 하부층을 형성하는 단계를 포함한다. 포토레지스트 하부층의 표면 특성은 처리 공정을 사용하여 조작될 수 있다.