FILM FORMING METHOD AND FILM FORMING APPARATUS

The present invention provides a film forming method and a film forming device capable of forming a nitride film of good film quality at a lower temperature using an ALD-based film forming method. The film forming method of forming the nitride film on a substrate in a chamber repeatedly performs a s...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAMURA HIDEO, SERIZAWA YOSUKE, ASHIZAWA HIROAKI, IDENO YOSHIKAZU, SHIMIZU TAKAYA, MURAKAMI SEISHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a film forming method and a film forming device capable of forming a nitride film of good film quality at a lower temperature using an ALD-based film forming method. The film forming method of forming the nitride film on a substrate in a chamber repeatedly performs a source gas adsorption process including a step of supplying a source gas containing a metal element to form the nitride film on the substrate and a step of purging a residual gas, and a nitrification process including a step of supplying a nitride gas onto the substrate and a step of purging the residual gas. Moreover, a hydrazine-based compound gas is supplied as a part or all of the nitride gas. 본 발명은 ALD를 베이스로 한 성막 방법을 이용하여 양호한 막질의 질화막을 보다 저온에서 성막할 수 있는 성막 방법 및 성막 장치를 제공하는 것을 과제로 한다. 챔버 내에서 기판 상에 질화막을 성막하는 성막 방법은, 기판 상에 질화막을 구성하는 금속 원소를 포함하는 원료 가스를 공급하는 단계 및 잔류 가스를 퍼지하는 단계를 포함하는 원료 가스 흡착 공정과, 기판 상에 질화 가스를 공급하는 단계 및 잔류 가스를 퍼지하는 단계를 포함하는 질화 공정을 반복해서 행하고, 질화 가스의 일부 또는 전부로서 히드라진계 화합물 가스를 공급한다.