Method for depositing tungsten thin film

A tungsten thin film deposition method according to an embodiment of the present invention includes the steps of: forming a nucleation layer on a substrate by alternately supplying precursor gas and reaction gas into a process chamber in a vacuum atmosphere; and supplying hydrogen-containing gas int...

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Bibliographische Detailangaben
Hauptverfasser:	KIM DONG WOO, HAN TAE SUNG, SUN WOO HOON, YOON WON JUN, CHOI SEOK KYU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A tungsten thin film deposition method according to an embodiment of the present invention includes the steps of: forming a nucleation layer on a substrate by alternately supplying precursor gas and reaction gas into a process chamber in a vacuum atmosphere; and supplying hydrogen-containing gas into the process chamber while the internal pressure of the process chamber is higher than the pressure in the step of forming the nucleation layer to remove impurities remaining in the nucleation layer. The present invention can reduce the specific resistance by reducing the impurity content in the tungsten film. 본 발명의 실시 예에 의한 텅스텐 박막 증착 방법은 진공 분위기의 공정 챔버 내에 전구체 가스와 반응 가스를 교대로 공급하여 기판 상에 핵 생성층을 형성하는 단계; 및 상기 공정 챔버의 내부 압력이 상기 핵 생성층을 형성하는 단계에서의 압력보다 상승된 상태에서 상기 공정 챔버 내에 수소 함유 가스를 공급하여 상기 핵 생성층 내에 잔류하는 불순물을 제거하는 단계를 포함한다.