OXIDE SEMICONDUCTOR THIN FILM THIN FILM TRANSISTOR AND SPUTTERING TARGET

An objective of the present invention is to provide an oxide semiconductor thin film having a relatively low manufacturing cost, high carrier mobility, and light stress resistance when a thin film transistor is formed. The oxide semiconductor thin film contains a metal element. The metal element is...

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Bibliographische Detailangaben
Hauptverfasser:	OCHI MOTOTAKA, KAWARADA TAKAO, NISHIYAMA KOHEI, TERAMAE YUMI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An objective of the present invention is to provide an oxide semiconductor thin film having a relatively low manufacturing cost, high carrier mobility, and light stress resistance when a thin film transistor is formed. The oxide semiconductor thin film contains a metal element. The metal element is composed of In, Zn, Fe, and unavoidable impurities. For the total number of atoms of In, Zn, and Fe, the number of atoms of In is 58 atm% or more and 80 atm% or less, the number of atoms of Zn is 19 atm% or more and 41 atm% or less, and the number of atoms of Fe is 0.6 atm% or more and 3 atm% or less. [과제] 본 발명은 제조 비용이 비교적 낮고, 박막 트랜지스터를 형성했을 때의 캐리어 이동도 및 광 스트레스 내성이 높은 산화물 반도체 박막의 제공을 목적으로 한다. [해결 수단] 본 발명은, 금속 원소를 포함하는 산화물 반도체 박막으로서, 상기 금속 원소가 In, Zn, Fe 및 불가피적 불순물로 이루어지고, In, Zn 및 Fe의 합계 원자수에 대해, In의 원자수가 58atm% 이상 80atm% 이하, Zn의 원자수가 19atm% 이상 41atm% 이하, Fe의 원자수가 0.6atm% 이상 3atm% 이하이다.