SINGLE-CRYSTAL HEXAGONAL BORON NITRIDE LAYER AND METHOD FORMING SAME

Provided is a method comprising the steps of: depositing a copper layer on a first substrate; annealing the copper layer; forming a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate. 방법은, 구리층...

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Bibliographische Detailangaben
Hauptverfasser:	CHUU CHIH PIAO, LI LAIN JONG, CHANG WEN HAO, WEN CHAO KAI, TSENG CHIENCHIH, CHEN TSE AN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a method comprising the steps of: depositing a copper layer on a first substrate; annealing the copper layer; forming a hexagonal boron nitride (hBN) film on the copper layer; and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate. 방법은, 구리층을 제1 기판 위에 성막하는 단계; 구리층을 어닐링하는 단계; 육방정계 붕소 질화물(Hexagonal Boron Nitride, hBN)막을 구리층 위에 성막하는 단계; 및 hBN막을 구리층에서 제거하는 단계를 포함한다. HBN막은 제2 기판으로 전사될 수 있다.