하드 마스크(hard mask) 조성물
아민으로 치환된 풀러렌 유도체 및 가교 제제를 갖는, 스핀-온 하드-마스크를 형성하기 위한 조성물이 본원에 개시되고 청구된다. 제형은 반도체 산업에서 사용되는 다른 용매와 드레인(drain) 상용성이다. Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain...
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| creator | JACKSON EDWARD A BROWN ALAN LADA THOMAS DAWSON GUY ROBINSON ALEX PHILLIP GRAHAM ROTH JOHN L |
| description | 아민으로 치환된 풀러렌 유도체 및 가교 제제를 갖는, 스핀-온 하드-마스크를 형성하기 위한 조성물이 본원에 개시되고 청구된다. 제형은 반도체 산업에서 사용되는 다른 용매와 드레인(drain) 상용성이다.
Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20200125662A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20200125662A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20200125662A3</originalsourceid><addsrcrecordid>eNrjZFB9O3XG68lzFF4v73jTteRt4xqNjMSiFIXcxOJsTYU3Cze8adn4es0eHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkYGBoZGpmZuRoTJwqAPGYLws</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>하드 마스크(hard mask) 조성물</title><source>esp@cenet</source><creator>JACKSON EDWARD A ; BROWN ALAN ; LADA THOMAS ; DAWSON GUY ; ROBINSON ALEX PHILLIP GRAHAM ; ROTH JOHN L</creator><creatorcontrib>JACKSON EDWARD A ; BROWN ALAN ; LADA THOMAS ; DAWSON GUY ; ROBINSON ALEX PHILLIP GRAHAM ; ROTH JOHN L</creatorcontrib><description>아민으로 치환된 풀러렌 유도체 및 가교 제제를 갖는, 스핀-온 하드-마스크를 형성하기 위한 조성물이 본원에 개시되고 청구된다. 제형은 반도체 산업에서 사용되는 다른 용매와 드레인(drain) 상용성이다.
Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.</description><language>kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOSITIONS BASED THEREON ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201104&DB=EPODOC&CC=KR&NR=20200125662A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201104&DB=EPODOC&CC=KR&NR=20200125662A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JACKSON EDWARD A</creatorcontrib><creatorcontrib>BROWN ALAN</creatorcontrib><creatorcontrib>LADA THOMAS</creatorcontrib><creatorcontrib>DAWSON GUY</creatorcontrib><creatorcontrib>ROBINSON ALEX PHILLIP GRAHAM</creatorcontrib><creatorcontrib>ROTH JOHN L</creatorcontrib><title>하드 마스크(hard mask) 조성물</title><description>아민으로 치환된 풀러렌 유도체 및 가교 제제를 갖는, 스핀-온 하드-마스크를 형성하기 위한 조성물이 본원에 개시되고 청구된다. 제형은 반도체 산업에서 사용되는 다른 용매와 드레인(drain) 상용성이다.
Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB9O3XG68lzFF4v73jTteRt4xqNjMSiFIXcxOJsTYU3Cze8adn4es0eHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkYGBoZGpmZuRoTJwqAPGYLws</recordid><startdate>20201104</startdate><enddate>20201104</enddate><creator>JACKSON EDWARD A</creator><creator>BROWN ALAN</creator><creator>LADA THOMAS</creator><creator>DAWSON GUY</creator><creator>ROBINSON ALEX PHILLIP GRAHAM</creator><creator>ROTH JOHN L</creator><scope>EVB</scope></search><sort><creationdate>20201104</creationdate><title>하드 마스크(hard mask) 조성물</title><author>JACKSON EDWARD A ; BROWN ALAN ; LADA THOMAS ; DAWSON GUY ; ROBINSON ALEX PHILLIP GRAHAM ; ROTH JOHN L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200125662A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>JACKSON EDWARD A</creatorcontrib><creatorcontrib>BROWN ALAN</creatorcontrib><creatorcontrib>LADA THOMAS</creatorcontrib><creatorcontrib>DAWSON GUY</creatorcontrib><creatorcontrib>ROBINSON ALEX PHILLIP GRAHAM</creatorcontrib><creatorcontrib>ROTH JOHN L</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JACKSON EDWARD A</au><au>BROWN ALAN</au><au>LADA THOMAS</au><au>DAWSON GUY</au><au>ROBINSON ALEX PHILLIP GRAHAM</au><au>ROTH JOHN L</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>하드 마스크(hard mask) 조성물</title><date>2020-11-04</date><risdate>2020</risdate><abstract>아민으로 치환된 풀러렌 유도체 및 가교 제제를 갖는, 스핀-온 하드-마스크를 형성하기 위한 조성물이 본원에 개시되고 청구된다. 제형은 반도체 산업에서 사용되는 다른 용매와 드레인(drain) 상용성이다.
Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS |
| title | 하드 마스크(hard mask) 조성물 |
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